Seoul, Dec 6:Tech giant Samsung on Wednesday announced that it has commenced mass production of the first 512GB memory chip for next-generation mobile devices.
Utilising Samsung’s latest 64-layer, 512-GB V-NAND chips, the new 512GB Universal Flash Storage (eUFS) memory chip provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets, news agency quoted citing company’s statement.
Jaesoo Han, Executive Vice President of Memory Sales and Marketing at Samsung Electronics, said “The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro-SD cards,”
“By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world,” Jaesoo further added.
The enhanced storage capacity will provide users a much more extensive mobile experience.
“For example, the new high-capacity storage enables a flagship smartphone to store approximately 130 4K Ultra HD video clips of a 10-minute duration — which is about a tenfold increase over a 64GB chip which allows storing only about 13 of the same-sized video clips,” Samsung asserted.
Apart from this, the Samsung 512GB powerful chip also features strong read and write performance.